Semiconductor Diodes (I-V Characteristics in Forward and Reverse Bias; Diode as a Rectifier; I-V Characteristics of LED ) NEET Questions

Physics - Electronic Devices

Semiconductor Diodes (I-V Characteristics in Forward and Reverse Bias; Diode as a Rectifier; I-V Characteristics of LED ) MCQ Questions


7.
If the forward voltage applied to a Si diode is less than 0.7 V, the current is:
A.
Infinite
B.
Equal to reverse current
C.
Negligibly small
D.
Maximum
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ANSWER :
C. Negligibly small
8.
In forward bias, after crossing the threshold voltage, the diode current:
A.
Decreases linearly
B.
Decreases exponentially
C.
Remains constant
D.
Increases exponentially with small voltage increase
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ANSWER :
D. Increases exponentially with small voltage increase
9.
The threshold voltage (cut-in voltage) of a germanium diode is approximately:
A.
0 V
B.
0.7 V
C.
1.1 V
D.
0.2 V
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ANSWER :
D. 0.2 V
10.
In forward bias, the forward current in a typical p-n junction diode is of the order of:
A.
microamperes (ΞA)
B.
nanoamperes (nA)
C.
amperes (A)
D.
milliamperes (mA)
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ANSWER :
D. milliamperes (mA)
11.
Forward current in a p-n junction diode is the sum of:
A.
Only electron diffusion current
B.
Only hole diffusion current
C.
Drift current and recombination current
D.
Hole diffusion current and electron diffusion current
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ANSWER :
D. Hole diffusion current and electron diffusion current
12.
The process of carriers crossing from majority side to minority side under forward bias is called:
A.
Minority carrier injection
B.
Drift
C.
Recombination
D.
Minority carrier extraction
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ANSWER :
A. Minority carrier injection