Semiconductor Diodes (I-V Characteristics in Forward and Reverse Bias; Diode as a Rectifier; I-V Characteristics of LED ) NEET Questions

Physics - Electronic Devices

Semiconductor Diodes (I-V Characteristics in Forward and Reverse Bias; Diode as a Rectifier; I-V Characteristics of LED ) MCQ Questions


13.
When a p-n junction diode is reverse biased:
A.
p-side is grounded
B.
n-side is connected to positive terminal and p-side to negative terminal
C.
p-side is connected to positive terminal and n-side to negative terminal
D.
Both sides are at same potential
😑 View Answer Rough Work Error
ANSWER :
B. n-side is connected to positive terminal and p-side to negative terminal
14.
Under reverse bias, the effective barrier height of a p-n junction is:
A.
V₀
B.
(V₀ + V)
C.
V/V₀
D.
(V₀ - V)
😑 View Answer Rough Work Error
ANSWER :
B. (V₀ + V)
15.
The depletion layer width under reverse bias:
A.
Becomes zero
B.
Remains constant
C.
Increases
D.
Decreases
😑 View Answer Rough Work Error
ANSWER :
C. Increases
16.
In reverse bias, the diode current is:
A.
Zero in all cases
B.
Very large (~A)
C.
Very small (~ΞA), called reverse saturation current
D.
Equal to forward current
😑 View Answer Rough Work Error
ANSWER :
C. Very small (~ΞA), called reverse saturation current
17.
The reverse saturation current in a p-n junction diode:
A.
Increases exponentially with voltage
B.
Is almost independent of applied reverse voltage
C.
Decreases with applied voltage
D.
Increases linearly with applied voltage
😑 View Answer Rough Work Error
ANSWER :
B. Is almost independent of applied reverse voltage
18.
Reverse saturation current is mainly due to:
A.
Drift of thermally generated minority carriers across the junction
B.
Diffusion of majority carriers
C.
Tunneling through the barrier
D.
Recombination at the junction
😑 View Answer Rough Work Error
ANSWER :
A. Drift of thermally generated minority carriers across the junction