Characteristic Curves of a P-N Junction Diode in Forward and Reverse Bias NEET Questions

Physics - Experimental Skills

Characteristic Curves of a P-N Junction Diode in Forward and Reverse Bias MCQ Questions


7.
In an n-type semiconductor, the majority carriers are:
A.
Both equally
B.
Holes
C.
Electrons
D.
Neither
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ANSWER :
C. Electrons
8.
In a p-type semiconductor, the minority carriers are:
A.
Holes
B.
Atoms
C.
Electrons
D.
Protons
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ANSWER :
C. Electrons
9.
In an n-type semiconductor, the minority carriers are:
A.
Holes
B.
Protons
C.
Electrons
D.
Atoms
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ANSWER :
A. Holes
10.
The energy band gap of silicon at room temperature is approximately:
A.
5 eV
B.
0.1 eV
C.
1.1 eV
D.
0.7 eV
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ANSWER :
C. 1.1 eV
11.
The energy band gap of germanium at room temperature is approximately:
A.
5 eV
B.
1.1 eV
C.
0.1 eV
D.
0.7 eV
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ANSWER :
D. 0.7 eV
12.
A p-n junction is formed by:
A.
Joining two insulators
B.
Placing copper next to aluminium
C.
Stacking two metal plates
D.
Joining a p-type semiconductor and an n-type semiconductor (typically by diffusion in single crystal)
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ANSWER :
D. Joining a p-type semiconductor and an n-type semiconductor (typically by diffusion in single crystal)