Characteristic Curves of a P-N Junction Diode in Forward and Reverse Bias NEET Questions

Physics - Experimental Skills

Characteristic Curves of a P-N Junction Diode in Forward and Reverse Bias MCQ Questions


13.
When a p-n junction is formed, what happens at the interface?
A.
Only ions move
B.
No movement of charges
C.
Electrons from n-side diffuse into p-side; holes from p-side diffuse into n-side; recombination occurs
D.
Only electrons move
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ANSWER :
C. Electrons from n-side diffuse into p-side; holes from p-side diffuse into n-side; recombination occurs
14.
The depletion region in a p-n junction is:
A.
A metallic region
B.
An insulating layer of glass
C.
A region full of free carriers
D.
A region near the junction with no free charge carriers (only fixed ions)
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ANSWER :
D. A region near the junction with no free charge carriers (only fixed ions)
15.
The width of the depletion region is typically:
A.
Of the order of micrometres (Ξm)
B.
Of the order of metres
C.
Of the order of millimetres
D.
Of the order of nanometres
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ANSWER :
A. Of the order of micrometres (Ξm)
16.
Inside the depletion region, the fixed ions create:
A.
Gravitational field
B.
An internal electric field directed from n-side to p-side
C.
Magnetic field only
D.
No electric field
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ANSWER :
B. An internal electric field directed from n-side to p-side
17.
The potential difference across the depletion region (with no external bias) is called:
A.
Thermal voltage
B.
Forward voltage
C.
Reverse voltage
D.
Built-in potential or barrier potential (V_bi)
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ANSWER :
D. Built-in potential or barrier potential (V_bi)
18.
Built-in potential of a silicon p-n junction at room temperature is approximately:
A.
0.3 V
B.
5 V
C.
0.7 V
D.
1.5 V
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ANSWER :
C. 0.7 V